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Dicing of Thin Silicon Wafers with Ultra-Short Pulsed Lasers in the Range from 200 fs up to 10 ps

机译：超短脉冲激光器在200 fs至10 ps的范围内对薄硅晶片进行切割

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作者
Fornaroli, Christian; Holtkamp, Jens; Gillner, Arnold;
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年度 2015
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原文格式 PDF
正文语种 eng
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1. (Technical Communication) Dicing of Thin Silicon Wafers with Ultra-Short Pulsed Lasers in the Range from 200 fs up to 10 ps [J] . C. Fornaroli, J. Holtkamp, Arnold Gillner Journal of Laser Micro/Nanoengineering . 2015,第2期

机译：（技术交流）使用超短脉冲激光在200 fs至10 ps的范围内对薄硅晶片进行切割
2. Applications of ultra-short pulsed laser ablation: thin films deposition and fss dual-pulse laser-induced breakdown spectroscopy [J] . Teghil R, Santagata A, De Bonis A, Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2008,第5期

机译：超短脉冲激光烧蚀的应用：薄膜沉积和fs / ns双脉冲激光诱导击穿光谱
3. Using Lasers to Dice Thin Silicon Wafers [J] . DELPHINE PERROTTET, KALI DUNNE, GILLIAN WALSH, Advanced Packaging . 2008,第3期

机译：使用激光将薄硅晶片切成小方块
4. LASER ABLATION CUTTING OF THIN SILICON SUBTRATES WITH TUNABLE ULTRASHORT PULSED LASERS FROM 200FS-10PS [C] . Christian Fornaroli, Arnold Gillner ICALEO Congress . 2014

机译：激光烧蚀切割切割切割薄硅和可调谐超短脉冲激光器，来自200FS-10PS
5. The Experimental Study of Characterized Noble Gas Puffs Irradiated by Ultra-Short Laser Pulses Compared with X-Pinches as an X-Ray Source [D] . Schultz, Kimberly Ann. 2017

机译：与X夹点作为X射线源相比，超短激光脉冲辐照的稀有气体膨胀的实验研究
6. Good-Quality and High-Efficiency Dicing for Thick LiNbO3 Wafers Using Picosecond Laser Pulses [O] . Mingwei Lei, Wenyan Gao, Guang Li, 2020

机译：使用皮秒激光脉冲对厚LiNbO3晶圆进行高质量和高效率的切割
7. Dicing of thin silicon wafers with ultra-short pulsed lasers in the range from 200 fs up to 10 ps [O] . Fornaroli, C., Holtkamp, J., Gillner, A. 2015

机译：使用200 fs至10 ps范围内的超短脉冲激光切割薄硅晶圆
8. Laser plasma generation of hydrogen-free diamond-like carbon thin films on Zr-2.5Nb CANDU pressure tube materials and silicon wafers with a pulsed high-power CO(sub 2) laser [R] . Ebrahim, N. A. , Mouris, J. F. , Hoffmann, C. R. J. , 1995

机译：激光等离子体在Zr-2.5Nb CaNDU压力管材料和硅片上用脉冲高功率CO（sub 2）激光器生成无氢类金刚石碳薄膜

Dicing of Thin Silicon Wafers with Ultra-Short Pulsed Lasers in the Range from 200 fs up to 10 ps

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